Dow Corning Launches Power Electronics Industry’s First SiC Wafer Grading Structure, Raising the Bar for High Crystal Quality

Published May 12, 2014

Midland, Mich. – Dow Corning, a global leader in silicon and wide-bandgap semiconductor technology, today established a higher industry standard for silicon carbide (SiC) crystal quality by introducing a product grading structure that specifies ground-breaking new tolerances on killer device defects, such as micropipe dislocations (MPD), threading screw dislocations (TSD) and basal plane dislocations (BPD). This groundbreaking new grading structure aims to optimize the range, performance and cost of next-generation power electronic device designs fabricated on Dow Corning’s high-quality Prime Grade portfolio of 100-mm SiC wafers, which the company now offers in three new tiers of manufacturing-quality substrates labeled Prime Standard, Prime Select and Prime Ultra.